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Datasheet NTE108 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | NTE108 | Silicon NPN Transistor High Frequency Amplifier NTE108 Silicon NPN Transistor High Frequency Amplifier
Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise and fall times less t |
 NTE |
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| 4 | NTE1080 | Integrated Circuit TV Video Processor NTE1080 Integrated Circuit TV Video Processor
Features: D For Reverse AGC D Sufficient Gain and Quieting Sensitivity D Stable Gain Over the Wide Band D Small Wave Distortion with AGC Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Maximum Voltage V11 . . . . . . . . . . . . . . . |
NTE |
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| 3 | NTE1083 | Dual High Gain Pre-Amplifier
NTE1083 Integrated Circuit Hybrid, Dual High Gain Pre−Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 |
NTE |
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| 2 | NTE1085 | Integrated Circuit Low Noise Audio Preamp NTE1085 Integrated Circuit Low Noise Audio Preamp
Features: D Low Noise: VNI = 0.8µVrms(Typ) D High Open Loop Voltage Gain: GVO = 92dB (Typ) D Low Distortion: THD = 0.1% (Max) at VOUT = 7Vrms, GV = 40dB, f= 1kHz Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Supply Voltage, VCC |
NTE |
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