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Datasheet NTD20 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | NTD20 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 |
 EDI |
 |
| 13 | NTD20N03L27 | Power MOSFET ( Transistor ) NTD20N03L27 Power MOSFET
20 Amps, 30 Volts, N−Channel DPAK
This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode h |
 ON |
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| 12 | NTD20N03L27G | Power MOSFET ( Transistor ) NTD20N03L27 Power MOSFET
20 Amps, 30 Volts, N−Channel DPAK
This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode h |
ON |
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| 11 | NTD20N03L27T4 | Power MOSFET ( Transistor ) NTD20N03L27 Power MOSFET
20 Amps, 30 Volts, N−Channel DPAK
This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain−to−source diode h |
ON |
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