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Datasheet NTD12 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | NTD12 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 |
 EDI |
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| 2 | NTD122C | Thyristor/Diode Module Naina Semiconductor Ltd.
NTD122C
Features
Thyristor/Diode Module, 130A
• Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type nu |
 Naina Semiconductor |
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| 1 | NTD12N10 | Power MOSFET ( Transistor ) NTD12N10 Power MOSFET 12 Amps, 100 Volts
N−Channel Enhancement−Mode DPAK
Features http://onsemi.com
V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A
• Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • •
Fast Recovery Diode Avalanche Energy Specif |
 ON Semiconductor |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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