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Datasheet MRF237 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MRF237 | HIGH FREQUENCY TRANSISTOR MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tq = 25°C
Derate above 25°C Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol v CEO v CBO VEB |
 Motorola Semiconductors |
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| 1 | MRF237 | Silicon NPN RF Power Transistor MRF237
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to 225 MHz
PACKAGE STYLE TO-39
MAXIMUM RATINGS
IC VCBO VCEO PDISS TJ TSTG θJC 1.0 A 36 V 18 V 8.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 22 °C/W
1 |
 Advanced Semiconductor |
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