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Datasheet MMBT5550 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | MMBT5550 | SMD High Voltage Transistor SMD High Voltage Transistor (NPN)
MMBT5550/MMBT5551
SMD High Voltage Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications
• RoHS compliance
Mechanical Data
SOT-23
Case: Terminals:
Weight:
SOT-23, Plastic Package Solderable per MIL-STD- |
 TAITRON |
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| 15 | MMBT5550 | HIGH VOLTAGE TRANSISTOR MMBT5550
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
HIGH VOLTAGE TRANSISTOR
NPN SILICON
Refer to 2N5550 for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO vCB0 vEBO
'C
THERMAL CHARACTERISTICS
Char |
 Motorola Semiconductors |
|
| 14 | MMBT5550 | NPN Transistor MMBT5550
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
FEATURES
* Power dissipation PCM: 0.225 W(Tamb=25OC)
* Collector current ICM: 0.6 A
* Collector-base voltage V(BR)CBO: 160 V
* Operating and storage junction temperature range TJ,Tstg: -55 OC to + 150OC
MECHANICA DATA
*Case: Molded plastic
*Epoxy |
 Rectron |
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| 13 | MMBT5550 | High Voltage Transistors SMD Type
Transistors
Features
NPN Silicon
High Voltage Transistors MMBT5550
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
+0.12.4 -0.1
12
0.95+0.1 -0.1 1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current -continu |
 Kexin |
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