Datasheet MJE13003BRH Equivalent ( PDF )

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1	MJE13003BRH	TRANSISTORS 深圳深爱半导体股份有限公司 Shenzhen SI Semiconductors Co., LTD. 产品规格书 Product Specification NPN MJE 系列晶体管/MJE SERIES TRANSISTORS MJE13003BR(H) ●特点：耐高压开关速度快安全工作区宽符合 RoHS 规范 ●FEATURES：■HIGH VOLTAGE CAPABILITY �	SI Semiconductors

MJE13003 Datasheet ( Hoja de datos ) - resultados coincidentes

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MJE13003	NPN Silicon Power Transistors TIGER ELECTRONIC CO.,LTD Product specification SWITCHMODE Series NPN Silicon Power Transistors MJE13003 DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115	TGS
MJE13003	1.5 AMPERE, 400 VOLTS, 40 WATTS, NPN SILICON POWER TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13002/D Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly	Motorola Semiconductors
MJE13003	NPN SILICON TRANSISTOR MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collector current 1.5 A ICM : Collector-base voltage V(BR)CBO : 700 V 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emi	Wing Shing Computer Components

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SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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