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Datasheet ME4856 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | ME4856 | N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particul |
 Matsuki |
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| 1 | ME4856-G | N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particul |
Matsuki |
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