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Datasheet ME4542 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 ME4542   N- and P-Channel 30-V (D-S) MOSFET

ME4542 N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-
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Matsuki
datasheet ME4542 pdf

ME4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
ME4946

Dual N-Channel 60-V (D-S) MOSFET

Datasheet.es ME4946 Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored t
Matsuki
Matsuki
datasheet pdf - Matsuki
ME4542

N- and P-Channel 30-V (D-S) MOSFET

ME4542 N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tail
Matsuki
Matsuki
datasheet pdf - Matsuki
ME4953

Dual P-Channel 30V (D-S) MOSFET

ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on
Matsuki
Matsuki
datasheet pdf - Matsuki


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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