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Datasheet MBR10200CT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 17 | MBR10200CT | Schottky Barrier Rectifier ( Diode ) Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10200CT
FEATURES ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature solde |
 Inchange Semiconductor |
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| 16 | MBR10200CT | SCHOTTKY BARRIER DIODE Shenzhen Tuofeng Semiconductor Technology Co., Ltd
肖特基势垒二极管
SCHOTTKY BARRIER DIODE
MBR10200CT
主要参数 MAIN CHARACTERISTICS
封装 Package
IF(AV) VRRM Tj VF(max)
10（2×5）A
200 V 175 ℃ 0.75V （@Tj=125℃）
用途
z 高频开关电源 z 低压续流电路和保护电
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 Tuofeng Semiconductor |
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| 15 | MBR10200CT | 10A SCHOTTKY BARRIER RECTIFIER MBR10200CT / MBRF10200CT
Green
10A SCHOTTKY BARRIER RECTIFIER
Product Summary
MBR10200CT / MBRF10200CT (Per Leg)
VRRM (V)
IO (A)
VF (MAX) (V) @ +25°C
200 5
0.91
IR (MAX) (mA) @ +25°C
0.1
Features and Benefits
• Guard Ring Die Construction for Transient Protection • High Surge Current |
 Diodes |
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| 14 | MBR10200CT | Schottky Barrier Diodes MBR10150CT thru MBR10200CT
High Tjm Low IRRM Schottky Barrier Diodes
AC A
C(TAB)
A C A
A=Anode, C=Cathode, TAB=Cathode
MBR10150CT MBR10200CT
VRRM V
150 200
VRMS V
105 140
VDC V
150 200
Dimensions TO-220AB
Dim.
A B C D E F G H J K M N Q R
Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.42 |
 Sirectifier Semiconductors |
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