Datasheet MA3J745D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MA3J745D	Silicon epitaxial planar type Schottky Barrier Diodes (SBD) MA3J745D Silicon epitaxial planar type Unit : mm For switching circuits I Features • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.1	Panasonic

MA3J7 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MA3J744	Silicon epitaxial planar type Schottky Barrier Diodes (SBD) MA3J744 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Small S-mini type package allowing high-density mounting • Allowing to rectify under (IF(AV) = 200 mA) condition	Panasonic
MA3J745	Silicon epitaxial planar type Schottky Barrier Diodes (SBD) MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF	Panasonic
MA3J742	Silicon epitaxial planar type Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 3 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3X716 (MA716) is contained in one package (series connection) • Low forward voltage VF , optimum for low voltage rectification • O	Panasonic

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Número de pieza	Descripción	Fabricantes	PDF
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