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Datasheet M68Z512 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | M68Z512 | 4 Mbit 512Kb x8 Low Power SRAM with Output Enable M68Z512
4 Mbit (512Kb x8) Low Power SRAM with Output Enable
s
ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max)
s s s s s s s
OPERATION VOLTAGE: 5V ±10% 512 Kbit x8 SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O CMOS |
ST Microelectronics |
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2 | M68Z512-70NC1T | 4 Mbit 512Kb x8 Low Power SRAM with Output Enable M68Z512
4 Mbit (512Kb x8) Low Power SRAM with Output Enable
s
ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max)
s s s s s s s
OPERATION VOLTAGE: 5V ±10% 512 Kbit x8 SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O CMOS |
ST Microelectronics |
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1 | M68Z512NC | 4 Mbit 512Kb x8 Low Power SRAM with Output Enable M68Z512
4 Mbit (512Kb x8) Low Power SRAM with Output Enable
s
ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) – 10µA (max)
s s s s s s s
OPERATION VOLTAGE: 5V ±10% 512 Kbit x8 SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 70ns LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O CMOS |
ST Microelectronics |
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Número de pieza | Descripción | Fabricantes | |
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