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Datasheet M5M51016BRT-10L-I Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | M5M51016BRT-10L-I | 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 99 Jul Jul ,1997 ,1997
MITSUBISHI MITSUBISHI LSIs LSIs
M5M51016BTP,RT-70L,-10L-I, M5M51016BTP,RT-70L,-10L-I, -70LL,-10LL-I -70LL,-10LL-I
1048576-BIT(65536-WORD 1048576-BIT(65536-WORDBY BY16-BIT)CMOS 16-BIT)CMOSSTATIC STATICRAM RAM
DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM o |  Mitsubishi | cmos |
M5M Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | M5M2167P | 16K-Bit Static RAM
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et4U  Mitsubishi Electric data | | |
| 2 | M5M2167P-55 | 16K-Bit Static RAM MITSUBISHI LSI.
MSM2167P·SS, ·70
16384-BIT (16384-WORD BY I-BIT) STATIC RAM
DESCRIPTION
This is a family of 16384-word by l-bit static RAMs, fabricated with the high-performance N-channel silicon-gate MOS process and designed for high-speed application. These devices operate on a single 5V suppl Mitsubishi data | | |
| 3 | M5M2167P-70 | 16K-Bit Static RAM MITSUBISHI LSI.
MSM2167P·SS, ·70
16384-BIT (16384-WORD BY I-BIT) STATIC RAM
DESCRIPTION
This is a family of 16384-word by l-bit static RAMs, fabricated with the high-performance N-channel silicon-gate MOS process and designed for high-speed application. These devices operate on a single 5V suppl Mitsubishi data | | |
| 4 | M5M2168P | 16K-Bit Static RAM
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et4U Mitsubishi Electric data | | |
| 5 | M5M2168P-55 | 16K-Bit Static RAM MITSUBISHI LSls
MSM2168P-SS, -70
16384-BIT (4096-WORD BY 4-BIT) STATIC RAM
DESCRIPTION
This is a family of 4096 word by 4-bit static RAMs, fabricated with the high-performance N-channel silicon-gate MOS process and designed for high-speed application. These devices operate on a single 5V supply, an Mitsubishi data | | |
| 6 | M5M2168P-70 | 16K-Bit Static RAM MITSUBISHI LSls
MSM2168P-SS, -70
16384-BIT (4096-WORD BY 4-BIT) STATIC RAM
DESCRIPTION
This is a family of 4096 word by 4-bit static RAMs, fabricated with the high-performance N-channel silicon-gate MOS process and designed for high-speed application. These devices operate on a single 5V supply, an Mitsubishi data | | |
| 7 | M5M231000-xxxP | 1024K-Bit ROM MITSUBISHI LSls
M5M231000-XXXP
,--,"'_.• IT (131072.WORD BY 8·BIT) MASK·PROGRAMMABLE ROM
DESCRIPTION
The Mitsubishi M5M231000-XXXP is 1048576-bit maskprogrammable high speed read-only memory.
The M5M231000-XXXP is fabricat.ed by N-channel polysilicon gate technology and available in a 28~pin 0 Mitsubishi data | |
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