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Datasheet M58WR128ET Equivalent ( PDF )

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1 M58WR128ET   128 Mbit 8Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory

M58WR128ET M58WR128EB 128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYN
ST Microelectronics
ST Microelectronics
datasheet M58WR128ET pdf

M58WR12 Datasheet ( Hoja de datos ) - resultados coincidentes

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M58WR128ET

128 Mbit 8Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory

M58WR128ET M58WR128EB 128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Fi
ST Microelectronics
ST Microelectronics
datasheet pdf - ST Microelectronics
M58WR128EB

128 Mbit 8Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory

M58WR128ET M58WR128EB 128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Fi
ST Microelectronics
ST Microelectronics
datasheet pdf - ST Microelectronics


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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