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Datasheet M58LW064 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | M58LW064 | 64 Mbit x16 and x16/x32 / Block Erase Low Voltage Flash Memories M58LW064A M58LW064B
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
PRODUCT PREVIEW
s s s
M58LW064A x16 organisation, M58LW064B x16/x32 selectable MULTI-BIT CELL for HIGH DENSITY and LOW COST SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Supply Voltage – VDDQ = 2.7V to 3.6V or 1.8V to 2 |
ST Microelectronics |
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2 | M58LW064C | 64 Mbit (4Mb x16 / Uniform Block / Burst) 3V Supply Flash Memory M58LW064C
64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s WIDE x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
s
– VDDQ = 1.8 to VDD for I/O |
ST Microelectronics |
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1 | M58LW064D | 64 Mbit (8Mb x8 / 4Mb x16 / Uniform Block) 3V Supply Flash Memory M58LW064D
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY s WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH
s
Figure 1. Packages
SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations
s
ACCESS TIME – Random Read 110ns � |
ST Microelectronics |
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Número de pieza | Descripción | Fabricantes | |
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