Datasheet M24L416256SA Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	M24L416256SA	4-Mbit (256K x 16) Pseudo Static RAM ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax (70-ns speed) • Ultra low standby power • Automatic power-down when deselected • C	Elite Semiconductor Memory Technology

M24L41625 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
M24L416256SA	4-Mbit (256K x 16) Pseudo Static RAM ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax (70-ns speed) • Ultra low standby power • Automatic power-down w	Elite Semiconductor Memory Technology
M24L416256DA	4-Mbit (256K x 16) Pseudo Static RAM ESMT PSRAM Features • Advanced low-power architecture •High speed: 55 ns, 60 ns and 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1 MHz •Low standby power •Automatic power-down when deselected M24L416256DA 4-Mbit (25	Elite Semiconductor Memory Technology

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Número de pieza	Descripción	Fabricantes	PDF
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