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Datasheet LH51BV1000J Equivalent ( PDF )

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1 LH51BV1000J   CMOS 1M (128K x 8) Static Ram

LH51BV1000J FEATURES • Access time: 70 ns (MAX.) • Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 µs) Standby: 60 µA (MAX.) • Data Retention: 1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C) • Single power supply: 2.7 V to 3.6 V • Operating temperature: -25°C to +85°C
Sharp Electrionic Components
Sharp Electrionic Components		 datasheet LH51BV1000J pdf

LH51BV10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
LH51BV1000J

CMOS 1M (128K x 8) Static Ram

LH51BV1000J FEATURES • Access time: 70 ns (MAX.) • Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 µs) Standby: 60 µA (MAX.) • Data Retention: 1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C) • Single power supply: 2.7 V to 3.6 V • Operating temperature
 Sharp Electrionic Components
Sharp Electrionic Components		 datasheet pdf - Sharp Electrionic Components


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