Datasheet LET9045C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	LET9045C	RF power transistor LET9045C RF power transistor the LdmoST family Features ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz BeO free package In compliance with the 2002/95/EC european directive M243 epoxy sealed Description The	ST Microelectronics

LET90 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
LET9085	RF POWER TRANSISTORS Ldmos Enhanced Technology LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA PERFORMANCES POUT = 20 W EFF. = 28 % • EDGE PERFORMANCES POUT = 35 W EFF. = 35 % • GSM PERFORMANCES POUT = 75 W EFF. = 55 % • EXCELLENT THERMAL STAB	STMicroelectronics
LET9045S	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE • HI	STMicroelectronics
LET9045	RF power transistor LET9045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 18.5 dB gain @ 960 MHz / 28 V Plastic pa	ST Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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