Datasheet LC35W1000BTS-10U Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	LC35W1000BTS-10U	Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM Ordering number : ENN*6624 CMOS IC LC35W1000BM, BTS-70U/10U Asynchronous Silicon Gate 1M (131,072 words × 8 bits) SRAM Preliminary Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip	Sanyo

LC35W1000BTS- Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
LC35W1000BTS-70U	Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM Ordering number : ENN*6624 CMOS IC LC35W1000BM, BTS-70U/10U Asynchronous Silicon Gate 1M (131,072 words × 8 bits) SRAM Preliminary Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. Th	Sanyo
LC35W1000BTS-10U	Asynchronous Silicon Gate 1M (131 /072 words x 8 bits) SRAM Ordering number : ENN*6624 CMOS IC LC35W1000BM, BTS-70U/10U Asynchronous Silicon Gate 1M (131,072 words × 8 bits) SRAM Preliminary Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. Th	Sanyo

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