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Datasheet L2SC3356LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | L2SC3356LT1 | High-Frequency Amplifier Transistor DATA SHEET
LESHAN RADIO COMPANY, LTD.
L2SC3356LT1
3
DESCRIPTION
1 2
The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for It has dynamic range and good current characteristic.
low noise amplifier at VHF, UHF and CATV band.
SOT-23
FEATURES
• Low Noise and Hi |
 Leshan Radio Company |
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| 1 | L2SC3356LT1G | High-Frequency Amplifier Transistor DATA SHEET
LESHAN RADIO COMPANY, LTD.
DESCRIPTION
The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
ORDERING INFORMATION
L2SC3356LT1G
3
1
Device L2SC3356LT1G |
Leshan Radio Company |
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