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Datasheet L2SB1197KRLT1 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | L2SB1197KRLT1 | Low Frequency Transistor PNP Silicon LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor
PNP Silicon
L2SB1197K*LT1
FEATURE
ƽHigh current capacity in compact package. IC = í0.8A.
ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽPb-Free Package is available.
3
1 2
SOT– 23 (TO–236AB)
DEVICE MARKING AND |
Leshan Radio Company |
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1 | L2SB1197KRLT1G | Low Frequency Transistor PNP Silicon LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor
PNP Silicon
L2SB1197K*LT1
FEATURE
ƽHigh current capacity in compact package. IC = í0.8A.
ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽPb-Free Package is available.
3
1 2
SOT– 23 (TO–236AB)
DEVICE MARKING AND |
Leshan Radio Company |
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Número de pieza | Descripción | Fabricantes | |
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