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Datasheet KTD998 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | KTD998 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB778
APPLICATIONS ·High power amplifier applications ·Recommend for 45-50W audio frequency amplifier
output stage applic |
 Inchange Semiconductor |
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| 1 | KTD998 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary to KTB778.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
DC Puls |
 KEC |
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