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Datasheet KTD718 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | KTD718 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB688
APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier
output s |
 Inchange Semiconductor |
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| 2 | KTD718 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES ᴌRecommended for 45ᴕ50W Audio Frequency
Amplifier Output Stage. ᴌComplementary to KTB688.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ba |
 KEC |
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| 1 | KTD718B | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary to KTB688B.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Curren |
KEC |
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