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Datasheet KTD2061 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | KTD2061 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD2061
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ (IC= 0.5A, IB= 50mA) ·Complement to Type KTB1369
APPLICATIONS ·High |
 Inchange Semiconductor |
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| 1 | KTD2061 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATION
FEATURES High Breakdown Voltage : VCEO=180V(Min.) High Transition Frequency : fT=100MHz(Typ.) High Current : IC(max)=2A. Complementary to K |
 KEC |
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