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Datasheet KTD1302 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | KTD1302 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
AUDIO MUTING APPLICATION.
FEATURES ᴌHigh Emitter-Base Voltage : VEBO=12V(Min.). ᴌHigh Reverse hFE
: Reverse hFE=20(Min.) (VCE=2V, IC=4mA). ᴌLow on Resistance :RON=0.6ή(Typ.) (IB=1mA).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Coll |
 KEC |
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| 3 | KTD1302 | NPN Transistors SMD Type
NPN Transistors KTD1302
Transistors
■ Features
● Small Flat Package ● Audio Muting Application ● High Emitter-Base Voltage
1.70 0.1
0.42 0.1
0.46 0.1
1.Base 2.Collector 3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter V |
 Kexin |
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| 2 | KTD1302 | TRANSISTOR KTD1302
TRANSISTOR (NPN)
FEATURES z Small Flat Package z Audio Muting Application z High Emitter-Base Voltage
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter V |
 Jin Yu Semiconductor |
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| 1 | KTD1302 | TRANSISTOR Product specification
KTD1302
SOT-89
Unit:mm
1.50 ±0.1
■ Features
● Collector Power Dissipation: PC=500mW ● Collector Current: IC=300mA
4.50±0.1 1.80±0.1
1
0.48±0.1
2
3
0.80±0.1 0.44±0.1
0.53±0.1
3.00±0.1
0.40±0.1
2.60±0.1
2.50±0.1 4.00±0.1
1.Base 2.Collector 3.Emitter
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 TY Semiconductor |
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