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Datasheet KTC4379 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | KTC4379 | EPITAXIAL PLANAR NPN TRANSISTOR 30Ω J B
EU
SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS.
FEATURES Low Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) PC=1 2W (Mounted on Ceramic Substrate) Small Flat Package. Complementary to KTA1666.
MA |
 KEC |
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| 4 | KTC4379 | EPITAXIAL PLANAR NPN TRANSISTOR (POWER AMPLIFIER/ POWER SWITCHING) Free Datasheet http:///
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.gif "KEC(Korea Electronics)"){kind=logo} KEC(Korea Electronics) |
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| 3 | KTC4379 | NPN EPITAXIAL PLANAR TRANSISTOR KTC4379
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1 2 3
SOT-89
ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temp |
 Weitron |
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| 2 | KTC4379 | TRANSISTOR Product specification
KTC4379
SOT-89
Unit:mm
1.50 ±0.1
■ Features
● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary to KTA1666
4.50±0.1 1.80±0.1
1
0.48±0.1
2
3
0.80±0.1 0.44±0.1
0.53±0.1
3.00±0.1
0.40±0.1
2.60±0.1
2.50±0.1 4.00±0.1
1.B |
 TY Semiconductor |
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