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Datasheet KTC4376 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | KTC4376 | NPN Transistor RoHS KTC4376
KTC4376 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: 800 Collector-base voltage
mA
OV(BR)CBO:
35 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3 |
 WEJ |
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| 4 | KTC4376 | EPITAXIAL PLANAR NPN TRANSISTOR J
BP E
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1664.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector |
 KEC |
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| 3 | KTC4376 | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT) Free Datasheet http:///
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.gif "KEC(Korea Electronics)"){kind=logo} KEC(Korea Electronics) |
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| 2 | KTC4376 | TRANSISTOR SMD Type
Transistors Diodes IC Transistor T
Product specification
KTC4376
SOT-89
4.50±0.1 1.80±0.1
Unit:mm
1.50 ±0.1
■ Features
● Collector Power Dissipation: PC=500mW ● Collector Current: IC=800mA
1
0.48±0.1
2
3
0.80±0.1 0.44±0.1
0.53±0.1
3.00±0.1
0.40±0.1
2.60±0.1
2.50 |
 TY Semiconductor |
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