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Datasheet KTC4374 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | KTC4374 | NPN Transistor RoHS KTC4374
KTC4374 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: 400 Collector-base voltage
mA
OV(BR)CBO:
80 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3 |
 WEJ |
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| 3 | KTC4374 | EPITAXIAL PLANAR NPN TRANSISTOR J
BE E
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1662.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collec |
 KEC |
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| 2 | KTC4374 | EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE) Free Datasheet http:///
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.gif "KEC(Korea Electronics)"){kind=logo} KEC(Korea Electronics) |
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| 1 | KTC4374 | TRANSISTOR KTC4374
TRANSISTOR (NPN)
FEATURES z Small Flat Package z General Purpose Application
SOT-89-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag |
 Jin Yu Semiconductor |
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