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Datasheet KTC3879 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
7 | KTC3879 | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
KTC3879
0.05A , 35V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High Power Gain
APPLICATIONS
High Frequency Application HF, VHF Band Amplifier Application
SOT-23
A
L
3
Top View C B
12
KE
1
3 |
SeCoS |
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6 | KTC3879 | NPN Transistor Plastic-Encapsulate Transistors
FEATURES
• High power gain
KTC3879 (NPN)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature
unless otherwise no |
HOTTECH |
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5 | KTC3879 | NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor
FEATURES
z High power gain.
Pb
Lead-free
APPLICATIONS
z High frequency application. z HF,VHF band amplifier appilication.
Production specification
KTC3879
ORDERING INFORMATION
Type No.
Marking
KTC3879
RR/RO/RY
SOT-23
Package Code SOT-23
MAXIMUM RATI |
Galaxy Microelectronics |
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4 | KTC3879 | NPN Transistor KTC3879
TRANSISTOR (NPN)
FEATURES High Power Gain
APPLICATIONS High Frequency Application HF,VHF Band Amplifier Application
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
35
VCEO Collector-Emitter Voltage
30
VEBO Emitter-Ba |
JinYu |
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Número de pieza | Descripción | Fabricantes | |
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