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Datasheet KTB1368 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | KTB1368 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB1368
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·Collector Power Dissipation-
: PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@ (IC= -3A, IB= -0.3A) · |
 Inchange Semiconductor |
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| 1 | KTB1368 | TRIPLE DIFFUSED PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTB1368
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Good Linearity of hFE. Complementary to KTD2060.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Co |
 KEC |
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