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Datasheet KTA1962 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | KTA1962 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTA1962
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type KTC5242
APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity aud |
 Inchange Semiconductor |
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| 2 | KTA1962 | TRIPLE DIFFUSED PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS.
FEATURES High Collector Voltage : VCEO=-230V(Min.) Complementary to KTC5242. Recommended for 80W High Fidelity Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage E |
 KEC |
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| 1 | KTA1962A | TRIPLE DIFFUSED PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS.
FEATURES High Collector Voltage : VCEO=-230V(Min.) Complementary to KTC5242A. Recommended for 80W High Fidelity Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage |
KEC |
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