|
|
Datasheet KMB6D0DN35QB Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | KMB6D0DN35QB | Dual N-Ch Trench MOSFET SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters.
FEATURES VDSS=35V, ID=6A. Drain-Source ON Resistance. R |
KEC |
KMB6D0DN3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
KMB6D0DN30QA | Trench MOSFET |
KEC |
|
KMB6D0DN35QB | Dual N-Ch Trench MOSFET |
KEC |
|
KMB6D0DN30QB | Dual N-Ch Trench MOSFET |
KEC |
Esta página es del resultado de búsqueda del KMB6D0DN35QB. Si pulsa el resultado de búsqueda de KMB6D0DN35QB se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |