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Datasheet KM736V795 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | KM736V795 | 128Kx36 Synchronous SRAM KM736V795
Document Title
128Kx36 Synchronous SRAM
128Kx36-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0 0.1
History
Initial draft Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change Input/output leackage currant from ±1µA to ±2µA Modify Read timing & Pow |
Samsung Semiconductor |
KM736V Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
KM736V687 | 64Kx36-Bit Synchronous Burst SRAM |
Samsung Semiconductor |
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KM736V789 | 128Kx36 Synchronous SRAM |
Samsung Semiconductor |
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KM736V689 | 64Kx36-Bit Synchronous Pipelined Burst SRAM |
Samsung Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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