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Datasheet KM416S8030 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | KM416S8030 | 2M x 16Bit x 4 Banks Synchronous DRAM KM416S8030
2M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS Latency (2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & In |
Samsung semiconductor |
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2 | KM416S8030B | 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL KM416S8030B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 June 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Jun. 1999
KM416S8030B
Revision History
Revision 0.0 (May 15, 1999)
CMOS SDRAM
• Chan |
Samsung semiconductor |
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1 | KM416S8030BN | 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL shrink-TSOP KM416S8030BN
Preliminary CMOS SDRAM
128Mb SDRAM
Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 Aug. 1999
Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.1 Aug. 1999
shrink-TSOP KM416S8030BN
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Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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