Datasheet KM416S1021C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	KM416S1021C	512K x 16-Bit x 2-Bank SDRAM KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface FEATURES • JEDEC standard 3.3V power supply • SSTL_3 (Class II) compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1, 2, 4, 8 & Full pag	Samsung Semiconductor

KM416S10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
KM416S1020BT-G10T	CMOS 16M-Bit SDRAM KM416S1020BT-G10T (1/2) IL08 C-MOS 16 M (1,048,576 x 16)-BIT SYNCHRONOUS DRAM —TOP VIEW— PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 I/O — I/O I/O — I/O I/O — I/O I/O — I/O I/O — I I I I I I I I I I I — SIGNAL VDD DQ0 DQ1 GND DQ2 DQ3	ETC
KM416S1020C	1M x 16 SDRAM KM416S1020C CMOS SDRAM 1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 0.6 September 1998 Samsung Electronics reserves the right to change products or specification without notice. w w w . t a d h s a t e e . u 4 m o c -1- Rev. 0.6 (Sep. 1998)	Samsung Semiconductor
KM416S1021C	512K x 16-Bit x 2-Bank SDRAM KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface FEATURES • JEDEC standard 3.3V power supply • SSTL_3 (Class II) compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs - CAS latency (2 & 3) - Burst length (1	Samsung Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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