|
|
Datasheet KHB2D0N60F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | KHB2D0N60F | (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor
SEMICONDUCTOR
TECHNICAL DATA
KHB2D0N60P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suita |
 KEC semiconductor |
 |
| 2 | KHB2D0N60F1 | (KHB2D0N60F1/P1) N-Channel MOS Field Effect Transistor
SEMICONDUCTOR
TECHNICAL DATA
KHB2D0N60P1/F1
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly sui |
KEC semiconductor |
|
| 1 | KHB2D0N60F2 | N-Channel MOS Field Effect Transistor SEMICONDUCTOR
TECHNICAL DATA
General Description
KHB2D0N60P/F/F2
N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB2D0N60P
A O C F E G B Q I
DIM MILLIMETERS _ 0.2 9.9 + A B C D E
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excel |
 KEC |
|
| Esta página es del resultado de búsqueda del KHB2D0N60F. Si pulsa el resultado de búsqueda de KHB2D0N60F se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |