Datasheet K80E08K3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K80E08K3	TK80E08K3 Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : \|Yfs\| = 135 S (typ.) :	Toshiba

K80E0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K80E08K3	TK80E08K3 Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : \|Yf	Toshiba
K80E07NE	TK80E07NE TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. z Low drain−source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
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