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Datasheet K7R321882 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | K7R321882 | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM K7R323682M K7R321882M K7R320982M Document Title
1Mx36 & 2Mx18 & 4Mx9 QDR TM II b2 SRAM
1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. 2. 3. 4. 5. 6. Pin name change from DLL to Doff. Vddq range change from 1.5V to 1.5V~1.8V. Updat |
 Samsung semiconductor |
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| 2 | K7R321882C | (K7R32xx82C) QDR II b2 SRAM
K7R323682C K7R321882C K7R320982C
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
36Mb QDRII SRAM Specification
165 FBGA with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS |
Samsung semiconductor |
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| 1 | K7R321882M | 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM K7R323682M K7R321882M K7R320982M Document Title
1Mx36 & 2Mx18 & 4Mx9 QDR TM II b2 SRAM
1Mx36-bit, 2Mx18-bit, 4Mx9-bit QDRTM II b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. 2. 3. 4. 5. 6. Pin name change from DLL to Doff. Vddq range change from 1.5V to 1.5V~1.8V. Updat |
Samsung semiconductor |
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