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Datasheet K7B801825B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | K7B801825B | 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM K7B403625M
Document Title
128Kx36-Bit Synchronous Burst SRAM
128Kx36 Synchronous SRAM
Revision History
Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA. Change ISB2 value |
Samsung semiconductor |
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2 | K7B801825B-QC65 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7B803625B K7B801825B
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 1.0 History Initial draft Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1. Final spec |
Samsung semiconductor |
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1 | K7B801825B-QC75 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803609B K7A801809B
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. change scan order(1) fo |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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