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Datasheet K7A801809B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
3 | K7A801809B | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803601M K7A801801M
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. 0.0 0.1 History Initial draft Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. Remove 119BGA Packag |
Samsung semiconductor |
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2 | K7A801809B-QC25 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803609B K7A801809B
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. change scan order(1) fo |
Samsung semiconductor |
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1 | K7A801809B-QCI25 | 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM K7A803609B K7A801809B
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 1.0 History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. change scan order(1) fo |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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