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Datasheet K7A203600 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | K7A203600 | 64Kx36-Bit Synchronous Pipelined Burst SRAM K6X8016C3B Family
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial draft Revised - Deleted 44-TSOP2-400R package type. - Added Commercial product. Revised - Errata correction : corrected commercial product family name from K6 |
 Samsung semiconductor |
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| 3 | K7A203600A | 64Kx36-Bit Synchronous Pipelined Burst SRAM PRELIMINARY
K7A203600A
Document Title
64Kx36-Bit Synchronous Pipelined Burst SRAM
64Kx36 Synchronous SRAM
Revision History
Rev. No. 0.0 0.1 History Initial draft Change t OH Min value from 1.3 to 1.0 at tCYC 5.0 Change t HZC Min value from 1.3 to 1.0 at tCYC 5.0 Add tCYC 183MHz, 225MHz Change DC C |
Samsung semiconductor |
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| 2 | K7A203600B-QC14 | 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM K7A203600B K7A203200B K7A201800B
Document Title
Preliminary
64Kx36/x32 & 128Kx18 Synchronous SRAM
64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No 0.0 0.1 History 1. Initial draft 1. Add tCYC 250,225, 200MHz bin. Draft Date Dec. 10. 2001 Jan . 17. 2002 Remar |
Samsung semiconductor |
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| 1 | K7A203600B-QCI14 | 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM K7A203600B K7A203200B K7A201800B
Document Title
Preliminary
64Kx36/x32 & 128Kx18 Synchronous SRAM
64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No 0.0 0.1 History 1. Initial draft 1. Add tCYC 250,225, 200MHz bin. Draft Date Dec. 10. 2001 Jan . 17. 2002 Remar |
Samsung semiconductor |
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