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Datasheet K6T4008C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 52 | K6T4008C | 512Kx8 bit Low Power CMOS Static RAM K6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA Finalize - Changed Operating cur |
 Samsung semiconductor |
 |
| 51 | K6T4008C | 512Kx8 bit Low Power CMOS Static RAM K6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA Finalize - Changed Operating cur |
Samsung semiconductor |
|
| 50 | K6T4008C1B | 512Kx8 bit Low Power CMOS Static RAM K6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA Finalize - Changed Operating cur |
Samsung semiconductor |
|
| 49 | K6T4008C1B-B | 512Kx8 bit Low Power CMOS Static RAM K6T4008C1B Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA Finalize - Changed Operating cur |
Samsung semiconductor |
|
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