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Datasheet K6T1008C2E-GP55 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K6T1008C2E-GP55128Kx8 bit Low Power CMOS Static RAM

K6T1008C2E Family Document Title 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revise - Add 55ns parts
Samsung semiconductor
Samsung semiconductor
cmos


K6T Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K6T0808C1D32Kx8 bit Low Power CMOS Static RAM

K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622
Samsung semiconductor
Samsung semiconductor
cmos
2K6T0808C1D-B32Kx8 bit Low Power CMOS Static RAM

K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622
Samsung semiconductor
Samsung semiconductor
cmos
3K6T0808C1D-DB5532Kx8 bit Low Power CMOS Static RAM

K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622
Samsung semiconductor
Samsung semiconductor
cmos
4K6T0808C1D-DB7032Kx8 bit Low Power CMOS Static RAM

K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622
Samsung semiconductor
Samsung semiconductor
cmos
5K6T0808C1D-DL5532Kx8 bit Low Power CMOS Static RAM

K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622
Samsung semiconductor
Samsung semiconductor
cmos
6K6T0808C1D-DL7032Kx8 bit Low Power CMOS Static RAM

K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622
Samsung semiconductor
Samsung semiconductor
cmos
7K6T0808C1D-F32Kx8 bit Low Power CMOS Static RAM

K6T0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622
Samsung semiconductor
Samsung semiconductor
cmos



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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