DataSheet.es    


Datasheet K6E0808C1E-P Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K6E0808C1E-P32K x 8 Bit High-Speed CMOS Static RAM

K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. For Cisco CMOS SRAM Revision History Rev .No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial release with Preliminary. Release to Final Data S
Samsung semiconductor
Samsung semiconductor
cmos


K6E Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K6E0808C1C32Kx8 Bit High Speed CMOS Static RAM

PRELIMINARY K6E0808C1C-C Document Title 32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1. Delete Preliminary Update A.C parameters 2.1. Updated A.C para
Samsung semiconductor
Samsung semiconductor
cmos
2K6E0808C1C-1232Kx8 Bit High Speed CMOS Static RAM

PRELIMINARY K6E0808C1C-C Document Title 32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1. Delete Preliminary Update A.C parameters 2.1. Updated A.C para
Samsung semiconductor
Samsung semiconductor
cmos
3K6E0808C1C-1532Kx8 Bit High Speed CMOS Static RAM

PRELIMINARY K6E0808C1C-C Document Title 32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1. Delete Preliminary Update A.C parameters 2.1. Updated A.C para
Samsung semiconductor
Samsung semiconductor
cmos
4K6E0808C1C-2032Kx8 Bit High Speed CMOS Static RAM

PRELIMINARY K6E0808C1C-C Document Title 32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1. Delete Preliminary Update A.C parameters 2.1. Updated A.C para
Samsung semiconductor
Samsung semiconductor
cmos
5K6E0808C1C-C32Kx8 Bit High Speed CMOS Static RAM

PRELIMINARY K6E0808C1C-C Document Title 32Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out. CMOS SRAM Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1. Delete Preliminary Update A.C parameters 2.1. Updated A.C para
Samsung semiconductor
Samsung semiconductor
cmos
6K6E0808C1E32K x 8 Bit High-Speed CMOS Static RAM

K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. For Cisco CMOS SRAM Revision History Rev .No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial release with Preliminary. Release to Final Data S
Samsung semiconductor
Samsung semiconductor
cmos
7K6E0808C1E-C32K x 8 Bit High-Speed CMOS Static RAM

K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. For Cisco CMOS SRAM Revision History Rev .No. Rev. 0.0 Rev. 1.0 Rev. 2.0 History Initial release with Preliminary. Release to Final Data S
Samsung semiconductor
Samsung semiconductor
cmos



Esta página es del resultado de búsqueda del K6E0808C1E-P. Si pulsa el resultado de búsqueda de K6E0808C1E-P se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap