Datasheet K5A65D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K5A65D	TK5A65D TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK5A65D Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS	Toshiba

K5A Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K5A50D	TK5A50D TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS =	Toshiba Semiconductor
K5A60D	TK5A60D TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS =	Toshiba
K5A65D	TK5A65D TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII) TK5A65D Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.) Low leakage current: IDSS	Toshiba

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Número de pieza	Descripción	Fabricantes	PDF
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