Datasheet K4X56163PG-LE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4X56163PG-LE	16M x16 Mobile-DDR SDRAM K4X56163PG - L(F)E/G 16M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle wit	Samsung semiconductor

K4X56163PG Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4X56163PG-LG	16M x16 Mobile-DDR SDRAM K4X56163PG - L(F)E/G 16M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and C	Samsung semiconductor
K4X56163PG-FG	16M x16 Mobile-DDR SDRAM K4X56163PG - L(F)E/G 16M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and C	Samsung semiconductor
K4X56163PG-LE	16M x16 Mobile-DDR SDRAM K4X56163PG - L(F)E/G 16M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and C	Samsung semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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