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Datasheet K4X51163PE-FG Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | K4X51163PE-FG | 32Mx16 Mobile DDR SDRAM K4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L |
Samsung semiconductor |
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1 | K4X51163PE-FG | 32Mx16 Mobile DDR SDRAM K4X51163PE - L(F)E/G 32Mx16 Mobile DDR SDRAM
1. FEATURES
• VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS L |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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