Datasheet K4T51163QI Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4T51163QI	512Mb I-die DDR2 SDRAM K4T51163QI DDR2 SDRAM 512Mb I-die DDR2 SDRAM Specification 84FBGA with Halogen-Free & Lead-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Samsung

K4T5116 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4T51163QJ	512Mb J-die DDR2 SDRAM Rev. 1.1, Jul. 2011 K4T51043QJ K4T51083QJ K4T51163QJ 512Mb J-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications d	Samsung
K4T51163QG	512Mb G-die DDR2 SDRAM CSD18503Q5A www.ti.com SLPS358 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18503Q5A 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Pac	Samsung
K4T51163QB	512Mb B-die DDR2 SDRAM 512Mb B-die DDR2 SDRAM DDR2 SDRAM 512Mb B-die DDR2 SDRAM Specification Version 1.4 February 2005 Page 1 of 29 Rev. 1.4 Feb. 2005 512Mb B-die DDR2 SDRAM Contents DDR2 SDRAM 0. Ordering Information 1. Key Feature 2. Package Pinout/Mechnical Dimension & Addressing 2.1 Packa	Samsung

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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