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Datasheet K4S641633H-R Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | K4S641633H-R | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B |
 Samsung semiconductor |
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| 2 | K4S641633H-RBE | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B |
Samsung semiconductor |
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| 1 | K4S641633H-RE | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA K4S641633H - R(B)E/N/G/C/L/F
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. B |
Samsung semiconductor |
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