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Datasheet K4S561633F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
11 | K4S561633F | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Bu |
Samsung semiconductor |
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10 | K4S561633F-C | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Bu |
Samsung semiconductor |
|
9 | K4S561633F-E | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Bu |
Samsung semiconductor |
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8 | K4S561633F-F1H | 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC K4S561633F - X(Z)E/N/G/C/L/F
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES
• 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Bu |
Samsung semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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