Datasheet K4S51323LF-MF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	K4S51323LF-MF	4M x 32Bit x 4 Banks Mobile SDRAM K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -	Samsung semiconductor

K4S51323LF Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
K4S51323LF-ML	4M x 32Bit x 4 Banks Mobile SDRAM K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2,	Samsung semiconductor
K4S51323LF-MF	4M x 32Bit x 4 Banks Mobile SDRAM K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2,	Samsung semiconductor
K4S51323LF-MEL	4M x 32Bit x 4 Banks Mobile SDRAM K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2,	Samsung semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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